Samsung mass producing its new 256Gb fifth-generation V-NAND

Final updated: July tenth, 2018 at 09:fifty UTC+01:00

Samsung today announced that it has started mass production of its new fifth-generation 5-NAND memory chip. The company says that the chip features the industry's fastest data transfer speed. It's also said to exist the starting time to apply the "Toggle DDR 4.0" NAND interface.

The industry'due south first use of Toggle DDR 4.0 interface enables the data transfer speed between storage and memory over Samsung's new 256Gb V-NAND has crossed 1.4Gbps which is a xl pct improvement over its 64-layer predecessor.

Better performance with superior energy efficiency

There are more than 90 layers of "3D charge trap flash (CTF) cells" inside Samsung's fifth-generation Five-NAND which is the largest amount in the industry. They're stacked in a pyramid structure with microscopic channel holes vertically drilled throughout. The aqueduct holes are only a few hundred nanometers wide and comprise over 85 billion CTF cells that tin can store three $.25 of data each.

Despite the crash-land in operation, Samsung says that the energy efficiency of the new chip is comparable to that of the 64-layer chip. That'south largely because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND fleck also offers the fastest information write speed of 500-microseconds. It's an comeback of 30 percentage over the write speed of the predecessor. The response time to read signals has been reduced significantly to 50μs.

Samsung also announced today that information technology'due south preparing to introduce 1Tb and quad-level cell offerings to its 5-NAND lineup eventually. Samsung'southward new high-functioning retentiveness scrap will be used in a variety of devices including but not limited to premium smartphones.

Source: https://www.sammobile.com/2018/07/10/samsung-mass-producing-its-new-256gb-fifth-generation-v-nand/

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